The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Feb. 15, 2016
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Lutz Hoeppel, Alteglofsheim, DE;
Alexander F. Pfeuffer, Regensburg, DE;
Dominik Scholz, Regensburg, DE;
Isabel Otto, Regensburg, DE;
Norwin Von Malm, Nittendorf, DE;
Stefan Illek, Donaustauf, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
Disclosed is a method for producing a plurality of semiconductor chips (). A composite (), which comprises a carrier () and a semiconductor layer sequence (), is provided. Separating trenches () are formed in the semiconductor layer sequence () along an isolation pattern (). A filling layer () limiting the semiconductor layer sequence () toward the separating trenches () is applied to a side of the semiconductor layer sequence () facing away from the carrier (). Furthermore, a metal layer () adjacent to the filling layer () is applied in the separating trenches (). The semiconductor chips () are isolated by removing the metal layer () adjacent to the filling layer () in the separating trenches (). Each isolated semiconductor chip () has one part of the semiconductor layer sequence (), and of the filling layer (). Also disclosed is a semiconductor chip ().