The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Apr. 09, 2019
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Jerry R. Meyer, Catonsville, MD (US);
Igor Vurgaftman, Severna Park, MD (US);
Chadwick Lawrence Canedy, Washington, DC (US);
William W. Bewley, Falls Church, VA (US);
Chul Soo Kim, Springfield, VA (US);
Charles D. Merritt, Fairfax, VA (US);
Michael V. Warren, Arlington, VA (US);
Mijin Kim, Springfield, VA (US);
Abstract
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a 'W'-structured quantum well situated between two barrier layers, the 'W'-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.