The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 19, 2017
Applicant:
Fairchild Semiconductor Corporation, Sunnyvale, CA (US);
Inventor:
Martin Domeij, Sollentuna, SE;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/063 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01);
Abstract
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type. The second doped region can have a first portion and a second portion. The first portion can be disposed between the first doped region and the body region and the second portion can be disposed between the first doped region and the gate dielectric. The first portion of the second doped region can have a width less than a width of the first doped region.