The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Sep. 17, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Tadahiro Imada, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 27/0629 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 27/0207 (2013.01); H01L 27/085 (2013.01);
Abstract
A transistor which includes an electron transit layer and an electron supply layer which are stacked in a thickness direction of a substrate; an electron transit layer formed over the substrate in parallel to the electron transit layer and the electron supply layer; an anode electrode which forms a Schottky junction with the electron transit layer; and a cathode electrode which forms an ohmic junction with the electron transit layer are provided. The anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor.