The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 12, 2018
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Yung-Fung Lin, Taoyuan, TW;
Cheng-Wei Chou, Taoyuan, TW;
Szu-Yao Chang, New Taipei, TW;
Cheng-Tao Chou, Yunlin County, TW;
Hsiu-Ming Chen, Taoyuan, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 21/304 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/304 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01);
Abstract
A semiconductor device includes a substrate, a flowable dielectric material and a GaN-based semiconductor layer. The substrate has a pit exposed from an upper surface of the substrate, the flowable dielectric material fully fills the pit, and the GaN-based semiconductor layer is disposed over the substrate and the flowable dielectric material.