The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Dec. 29, 2017
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jaeyoon Park, Bucheon-si, KR;

SeHee Park, Paju-si, KR;

HyungJoon Koo, Bucheon-si, KR;

Kwanghwan Ji, Bucheon-si, KR;

PilSang Yun, Bucheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02483 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 21/02672 (2013.01); H01L 27/1225 (2013.01); H01L 29/045 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 21/0262 (2013.01);
Abstract

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.


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