The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Apr. 09, 2018
Applicant:
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02557 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/32 (2013.01); H01L 27/3248 (2013.01); H01L 27/3262 (2013.01); H01L 29/242 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01);
Abstract
A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.