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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10453893 B1

PDFFull Text
Date of Patent:
Oct. 22, 2019

Filed:

Dec. 01, 2017

Methods of providing semiconductor devices and semiconductor devices thereof

Applicant:

Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);

Inventors:

Cun-Zheng Ning, Chandler, AZ (US);

Sunay Turkdogan, Tempe, AZ (US);

Zhicheng Liu, Tempe, AZ (US);

Fan Fan, Tempe, AZ (US);

Assignee:

ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);

Attorney:

Bryan Cave Leighton Paisner LLP

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01); H01S 5/30 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 21/0256 (2013.01); H01L 21/0262 (2013.01); H01L 21/02557 (2013.01); H01L 21/02664 (2013.01); H01L 21/04 (2013.01); H01L 21/225 (2013.01); H01L 21/265 (2013.01); H01L 27/153 (2013.01); H01L 33/0087 (2013.01); H01L 33/0095 (2013.01); H01L 33/28 (2013.01); H01S 5/3018 (2013.01); H01S 5/4093 (2013.01); H01L 21/02568 (2013.01); H01L 33/005 (2013.01);
Abstract

Some embodiments include a method. The method can include: providing a carrier substrate; forming a first device material over the carrier substrate; and after forming the first device material over the carrier substrate, transforming the first device material into a second device material. Meanwhile, the transforming the first device material into the second device material can include: causing a cationic exchange in the first device material; and causing an anionic exchange in the first device material. The causing the cationic exchange in the first device material and the causing the anionic exchange in the first device material can occur approximately simultaneously. Other embodiments of related methods and systems are also disclosed.

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