The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 24, 2016
Sony Corporation, Tokyo, JP;
Shingo Takahashi, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
The present disclosure relates to a solid-state image sensing device, a manufacturing method, and an electronic apparatus, in which surface roughness on a wiring surface can be suppressed. In redistribution layer forming processing, a Ti/Cu film corresponds to a barrier layer and a seed layer is formed by Ti/Cu sputtering after opening a through-silicon via. At this point, actually, degassing heating, reverse sputtering, Ti deposition, and Seed-Cu deposition are sequentially performed. As a method of depositing a Seed-Cu film having high crystallinity in deposition of the Seed-Cu film, performing deposition by increasing a substrate temperature to a high temperature is one method, and the Seed-Cu film of Cu(111)/(200) is formed by performing deposition at the substrate temperature of 60 degrees or more, and Cu haze are suppressed. The present disclosure can be applied to a CMOS solid-state image sensing device used as an imaging device such as a camera.