The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

May. 16, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Tatsuya Suzuki, Kawasaki, JP;

Masanori Ogura, Tokyo, JP;

Takanori Suzuki, Tokyo, JP;

Jun Iba, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/361 (2011.01); H04N 5/359 (2011.01); H04N 5/374 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 5/359 (2013.01); H04N 5/361 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01);
Abstract

A photoelectric conversion apparatus includes a semiconductor substrate including recessed portions and insulators disposed on the respective recessed portions. The semiconductor substrate includes a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region that is of a conductivity type different from the first-conductivity-type and that is formed in the first semiconductor region, a second-conductivity-type third semiconductor region in contact with the second semiconductor region on a surface of the semiconductor substrate, and a first-conductivity-type fourth semiconductor region that includes the recessed portions. The second semiconductor region and the third semiconductor region are surrounded by the fourth semiconductor region on the surface of the semiconductor substrate. The insulators on the recessed portions extend through the fourth semiconductor region and are in contact with the first semiconductor region.


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