The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Aug. 06, 2018
Applicant:

Stmicroelectronics (Tours) Sas, Tours, FR;

Inventor:

Samuel Menard, Tours, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/332 (2006.01); H01L 27/02 (2006.01); H01L 29/74 (2006.01); H01L 29/747 (2006.01); H01L 29/87 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 29/7404 (2013.01); H01L 29/747 (2013.01); H01L 29/7416 (2013.01); H01L 29/87 (2013.01); H01L 29/41716 (2013.01); H01L 29/42308 (2013.01);
Abstract

A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.


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