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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10453801 B1

PDFFull Text
Date of Patent:
Oct. 22, 2019

Filed:

Apr. 07, 2016

Semiconductor devices and semiconductor packages including magnetic shielding layers and methods of manufacturing semiconductor devices and semiconductor packages

Applicants:

Bo-young Seo, Suwon-si, KR;

Yong-kyu Lee, Gwacheon-si, KR;

Inventors:

Bo-young Seo, Suwon-si, KR;

Yong-kyu Lee, Gwacheon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Charles D Garber

Assistant Examiner:

S M Sohel Imtiaz

Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 23/552 (2006.01); G11C 11/16 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G11C 11/161 (2013.01); G11C 11/1695 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 43/08 (2013.01); G11C 2211/5615 (2013.01); H01L 27/228 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A magnetic random-access memory (MRAM) device and a semiconductor package include a magnetic shielding layer that may suppress at least one of magnetic orientation errors and deterioration of magnetic tunnel junction (MTJ) structures due to external magnetic fields. A semiconductor device includes: a MRAM chip including a MRAM; and a magnetic shielding layer including an upper shielding layer and a via shielding layer. The upper shielding layer is on a top surface of the MRAM chip, and the via shielding layer extends from the upper shielding layer and passes through the MRAM chip.

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