The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 22, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sang-gyo Chung, Anyang-si, KR;
Yun-seung Kang, Seoul, KR;
Soung-hee Lee, Hwaseong-si, KR;
Ji-seung Lee, Seoul, KR;
Hyun-chul Lee, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); G03F 7/70466 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3088 (2013.01);
Abstract
Methods of fabricating an integrated circuit device are provided. The methods may form feature patterns on a substrate using a quadruple patterning technology (QPT) process including one photolithography process and two double patterning processes. Sacrificial spacers obtained by first double patterning process and spacers obtained by second double patterning process may be formed on a feature layer at an equal level.