The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Mar. 13, 2017
Applicant:
Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01J 37/317 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01J 37/3171 (2013.01); H01L 21/26513 (2013.01); H01L 22/12 (2013.01); H01L 29/36 (2013.01); H01L 29/045 (2013.01); H01L 29/66575 (2013.01);
Abstract
An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.