The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 06, 2018
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Kenichi Iguchi, Nagano, JP;
Haruo Nakazawa, Nagano, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 21/285 (2006.01); H01L 29/812 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2254 (2013.01); H01L 21/046 (2013.01); H01L 21/0455 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 21/268 (2013.01); H01L 21/28512 (2013.01); H01L 29/6606 (2013.01); H01L 29/66053 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/7393 (2013.01); H01L 29/7827 (2013.01); H01L 29/8122 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: forming, on a surface of an n-type semiconductor layer, an impurity source film containing both aluminum and beryllium; and forming a p-type impurity-doped layer in the n-type semiconductor layer by irradiating the impurity source film with first laser light to simultaneously introduce the aluminum and the beryllium into the n-type semiconductor layer.