The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Nov. 14, 2017
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventor:
Toshihiko Kobayashi, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H01G 4/232 (2006.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01); H01F 1/01 (2006.01); H01G 4/005 (2006.01); H01G 4/012 (2006.01); H05K 3/38 (2006.01); H05K 3/46 (2006.01); H01F 17/00 (2006.01); H01F 27/29 (2006.01); C25D 5/10 (2006.01); C25D 5/54 (2006.01); C25D 7/00 (2006.01); C23C 18/08 (2006.01); C23C 18/12 (2006.01); C25D 3/12 (2006.01); H05K 1/03 (2006.01); C25D 3/38 (2006.01);
U.S. Cl.
CPC ...
H01G 4/008 (2013.01); C23C 18/08 (2013.01); C23C 18/1212 (2013.01); C23C 18/1254 (2013.01); C23C 18/1279 (2013.01); C23C 18/1283 (2013.01); C25D 5/10 (2013.01); C25D 5/54 (2013.01); C25D 7/00 (2013.01); H01F 1/01 (2013.01); H01F 17/0013 (2013.01); H01F 27/292 (2013.01); H01G 4/005 (2013.01); H01G 4/012 (2013.01); H01G 4/12 (2013.01); H01G 4/232 (2013.01); H01G 4/30 (2013.01); H05K 3/38 (2013.01); H05K 3/46 (2013.01); C25D 3/12 (2013.01); C25D 3/38 (2013.01); H05K 1/0306 (2013.01); H05K 3/4611 (2013.01);
Abstract
A ceramic electronic component including a ceramic element assembly, an external electrode, and an underlying layer. In this ceramic electronic component, the underlying layer is formed on the ceramic element assembly, the external electrode is formed on the underlying layer, the underlying layer is formed of a metal material and a glass material containing a silicon atom, and the metal material exists in a highly dispersed state in the glass material.