The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Sep. 11, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventor:

Akira Katayama, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/419 (2006.01); G11C 7/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/16 (2013.01); G11C 11/1659 (2013.01); G11C 11/1677 (2013.01); G11C 13/004 (2013.01);
Abstract

According to one embodiment, a memory device, includes a memory cell; and a first circuit that performs a first read on the memory cell to generate a first voltage, performs a reference read on the memory cell to generate a second voltage, generates first data based on the first voltage and the second voltage, writes the first data in the memory cell on which the first read has been performed, performs a second read on the memory cell in which the first data has been written to generate a third voltage, and determines data that was stored in the memory cell when the first read was performed, based on the first voltage and the third voltage.


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