The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Sep. 29, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Carlos Joao Marques Martins, Munich, DE;

Aron Theil, Neufahrn b. Freising, DE;

Steffen Thiele, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); H01L 29/78 (2006.01); G01R 31/26 (2014.01); G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2851 (2013.01); G01R 31/025 (2013.01); G01R 31/2621 (2013.01); H01L 29/7848 (2013.01);
Abstract

Disclosed is a method, a circuit arrangement, and an electronic circuit. The method includes discharging a gate-source capacitance of a transistor device from a first voltage level to a second voltage level with a first resistor connected in parallel with the gate-source capacitance and measuring a first discharging time associated with the discharging, and discharging the gate-source capacitance from the first voltage level to the second voltage level with the first resistor and a second resistor connected in parallel with the gate-source capacitance and measuring a second discharging time associated with the discharging. The method further includes comparing a ratio between the first discharging time and the second discharging time with a predefined threshold, and detecting a fault based on the comparing.


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