The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Jun. 27, 2017
Applicant:

Auo Crystal Corporation, Taichung, TW;

Inventors:

Chang-Ho Yu, Kaohsiung, TW;

Yen-Ming Chen, Taichung, TW;

Assignee:

AUO Crystal Corporation, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 11/002 (2013.01); C30B 11/003 (2013.01); C30B 29/06 (2013.01);
Abstract

A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SiNO, 1≤x≤2, 1≤y≤2, and 0.1≤z≤1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.


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