The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 21, 2018
Sitime Corporation, Santa Clara, CA (US);
Aaron Partridge, Cupertino, CA (US);
Markus Lutz, Mountain View, CA (US);
Pavan Gupta, Belmont, CA (US);
SiTime Corporation, Santa Clara, CA (US);
Abstract
In a MEMS device, an oxide layer is disposed between first and second semiconductor layers and MEMS resonator is formed within a cavity in the first semiconductor layer. A first electrically conductive feature functionally coupled to the MEMS resonator is exposed at a surface of the first semiconductor layer, and an insulating region is exposed at the surface of the first semiconductor layer adjacent the first electrically conductive feature. A semiconductor cover layer is bonded to the surface of the first semiconductor layer to hermetically seal the MEMS resonator within the cavity. A second electrically conductive feature extends through the semiconductor cover layer to contact the first electrically conductive feature, and an isolation trench extends through the semiconductor cover layer to the insulating region to electrically isolate a conductive path formed by the first and second electrically conductive features.