The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 24, 2016
Hewlett-packard Development Company, L.p., Houston, TX (US);
The State of Oregon State Board of Higher Education on Behalf of Oregon State University, Corvallis, OR (US);
James Elmer Abbott, Jr., Corvallis, OR (US);
John M McGlone, Corvallis, OR (US);
Kristopher Olsen, Corvallis, OR (US);
Roberto A Pugliese, Tangent, OR (US);
Greg Scott Long, Corvallis, OR (US);
Douglas A Keszler, Corvallis, OR (US);
John Wager, Corvallis, OR (US);
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Spring, TX (US);
Oregon State University, Corvallis, OR (US);
Abstract
An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.