The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Apr. 11, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventor:
Jisoo Lee, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/355 (2011.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01); H04N 5/232 (2006.01);
U.S. Cl.
CPC ...
H04N 5/35581 (2013.01); H01L 27/14609 (2013.01); H01L 27/14625 (2013.01); H01L 27/14654 (2013.01); H04N 5/2254 (2013.01); H04N 5/23212 (2013.01);
Abstract
A scene can be captured by integrating a first sensor pixel for a first amount of time to produce an original first photometric and integrating a second sensor pixel for the first amount of time to produce an original second photometric. The first sensor pixel can be configured to saturate with photocharge slower than the second sensor pixel. The scene can be recaptured by integrating the second sensor pixel for a second amount of time less than the first amount of time.