The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Jun. 06, 2018
Applicants:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Peking University, Beijing, CN;

Inventors:

Yonghao Fei, Chengdu, CN;

Jishi Cui, Beijing, CN;

Yisheng Zhu, Shenzhen, CN;

Assignees:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Peking University, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); G02B 6/12 (2006.01); H01L 31/102 (2006.01); H01L 31/028 (2006.01); H01L 31/0232 (2014.01); H01L 31/0288 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); G02B 6/12 (2013.01); H01L 31/102 (2013.01); G02B 2006/12061 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/03529 (2013.01); H01L 31/1804 (2013.01); Y02P 70/521 (2015.11);
Abstract

An optical waveguide detector is provided, which includes: a silicon waveguide layer and a germanium waveguide layer. The germanium waveguide layer includes a first heavily germanium-doped area and a germanium-undoped area. A first surface of the germanium waveguide layer includes a surface of the first heavily germanium-doped area, and the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction. A width of the first heavily germanium-doped area is less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm. According to embodiments, a bandwidth of the optical waveguide detector can be effectively increased.


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