The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
May. 12, 2016
Beijing Apollo Ding Rong Solar Technology Co., Ltd., Beijing, CN;
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Neil Mackie, Fremont, CA (US);
Geordie Zapalac, San Francisco, CA (US);
Weijie Zhang, San Jose, CA (US);
John F. Corson, Mountain View, CA (US);
Xiaoqing He, Champaign, IL (US);
Angus Rockett, Champaign, IL (US);
Joel Varley, San Francisco, CA (US);
Vincenzo Lordi, San Francisco, CA (US);
BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., Beijing, CN;
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, Livermore, CA (US);
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, Urbana, IL (US);
Abstract
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.