The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Dec. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Talia S. Gershon, White Plains, NY (US);
Oki Gunawan, Westwood, NJ (US);
Richard A. Haight, Mahopac, NY (US);
Ravin Mankad, Yonkers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for forming an ohmic back contact for AgZnSn(S,Se)photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO, ZnO, SnO, ZnSnO, GaO, and combinations thereof. A photovoltaic device is also provided.