The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jun. 29, 2018
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Byoung Koun Min, Seoul, KR;
Gi Soon Park, Seoul, KR;
Hyung Suk Oh, Seoul, KR;
Yun Jeong Hwang, Seoul, KR;
Assignee:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); C23C 16/30 (2006.01); C23C 16/02 (2006.01); H01L 31/0392 (2006.01); H01L 31/0272 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); C23C 16/0218 (2013.01); C23C 16/305 (2013.01); H01L 31/0272 (2013.01); H01L 31/03923 (2013.01);
Abstract
Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.