The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Nov. 25, 2014
Tohoku University, Sendai-shi, Miyagi, JP;
Zeon Corporation, Tokyo, JP;
Tetsuya Goto, Sendai, JP;
Makoto Takeshita, Tokyo, JP;
TOHOKU UNIVERSITY, Sendai-shi, Miyagi, JP;
ZEON CORPORATION, Tokyo, JP;
Abstract
A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.