The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Aug. 22, 2018
Applicant:
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Inventor:
Victor Sizov, Dresden, DE;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/402 (2013.01); H01L 29/42356 (2013.01); H01L 29/2003 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01);
Abstract
A High Electron Mobility Transistor comprising a source and a drain, a III-N buffer layer and a III-N barrier layer jointly forming a 2DEG in the buffer layer between the source and the drain, a first gate electrode configured to receive a gate bias voltage and a second gate electrode located between the drain and the first gate and conductively connected to the source via the 2DEG.
Quick Actions:
Sizov, Victor. (2019). Noff iii-nitride high electron mobility transistor (U.S. Patent No. 10446675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10446675
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile