The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Feb. 28, 2018
Huawei Technologies Co., Ltd., Shenzhen, Guangdong, CN;
Xichao Yang, Shenzhen, CN;
Chen-Xiong Zhang, Plano, TX (US);
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, Guangdong, CN;
Abstract
A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region () connects a source region () and a drain region (); a pocket layer () and a gate oxide layer () are successively produced between the source region and a gate region (); a metal layer () is produced in a first area in the source region, the first area is located on a side on which the source region is in contact with the pocket layer, and the pocket layer covers at least a part of the metal layer; and the pocket layer and a second area in the source region form a first tunnel junction of the TFET, and the pocket layer and the metal layer form a second tunnel junction of the TFET.