The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Dec. 19, 2013
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Tomoo Morino, Anjo, JP;
Shoji Mizuno, Okazaki, JP;
Yuichi Takeuchi, Obu, JP;
Akitaka Soeno, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A silicon carbide semiconductor device includes: an element isolation layer and an electric field relaxation layer. The element isolation layer is arranged, from the surface of a base region to be deeper than the base region, between a main cell region and a sense cell region, and isolates the main cell region from the sense cell region. The electric field relaxation layer is arranged from a bottom of the base region to be deeper than the element isolation layer. The electric field relaxation layer is divided into a main cell region portion and a sense cell region portion. At least a part of the element isolation layer is arranged inside of a division portion of the electric field relaxation layer.