The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Mar. 06, 2018
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Shuntaro Fujii, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
A semiconductor deviceincludes: a well regionprovided on a surface layer of a semiconductor substrate; a source regionS and a drain regionD disposed to be distant from each other on the surface layer of the well region; a channel regionprovided between the source regionS and the drain regionD; and a gate electrodeprovided over the channel regionwith a gate insulatorinterposed therebetween. A gate length of the gate electrodeis 1.5 μm or less, the channel regionincludes indium as a channel impurity, a distance between a surface of the channel regionand a concentration peak position of the channel impurity is 20 nm to 70 nm, and a concentration of the channel impurity gradually decreases in a direction from the concentration peak position of the channel impurity to the surface of the channel region.