The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Nov. 06, 2017
Applicant:
Coolcad Electronics, Llc, College Park, MD (US);
Inventors:
Neil Goldsman, Takoma Park, MD (US);
Akin Akturk, Gaithersburg, MD (US);
Zeynep Dilli, Rockville, MD (US);
Brendan Michael Cusack, Bethesda, MD (US);
Mitchell Adrian Gross, College Park, MD (US);
Assignee:
CoolCAD Electronics, LLC, College Park, MD (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 31/108 (2006.01); H01L 27/144 (2006.01); H01L 29/08 (2006.01); H01L 31/02 (2006.01); H03F 3/45 (2006.01); H01L 49/02 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 31/18 (2006.01); H01L 21/82 (2006.01); G01J 1/42 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); G01J 1/429 (2013.01); H01L 21/0465 (2013.01); H01L 21/8213 (2013.01); H01L 28/20 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 31/02019 (2013.01); H01L 31/0312 (2013.01); H01L 31/108 (2013.01); H01L 31/1037 (2013.01); H01L 31/1812 (2013.01); H03F 3/45179 (2013.01); H03F 2203/45022 (2013.01); H03F 2203/45112 (2013.01);
Abstract
An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.