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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10446592 B1

PDFFull Text
Date of Patent:
Oct. 15, 2019

Filed:

Nov. 06, 2017

Silicon carbide integrated circuit active photodetector

Applicant:

Coolcad Electronics, Llc, College Park, MD (US);

Inventors:

Neil Goldsman, Takoma Park, MD (US);

Akin Akturk, Gaithersburg, MD (US);

Zeynep Dilli, Rockville, MD (US);

Brendan Michael Cusack, Bethesda, MD (US);

Mitchell Adrian Gross, College Park, MD (US);

Assignee:

CoolCAD Electronics, LLC, College Park, MD (US);

Attorney:

NovoTechIP International PLLC

Primary Examiner:

David P Porta

Assistant Examiner:

Fani Boosalis

Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 31/108 (2006.01); H01L 27/144 (2006.01); H01L 29/08 (2006.01); H01L 31/02 (2006.01); H03F 3/45 (2006.01); H01L 49/02 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 31/18 (2006.01); H01L 21/82 (2006.01); G01J 1/42 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); G01J 1/429 (2013.01); H01L 21/0465 (2013.01); H01L 21/8213 (2013.01); H01L 28/20 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 31/02019 (2013.01); H01L 31/0312 (2013.01); H01L 31/108 (2013.01); H01L 31/1037 (2013.01); H01L 31/1812 (2013.01); H03F 3/45179 (2013.01); H03F 2203/45022 (2013.01); H03F 2203/45112 (2013.01);
Abstract

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Find Patent Forward Citations

Goldsman, Neil. (2019). Silicon carbide integrated circuit active photodetector (U.S. Patent No. 10446592). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10446592

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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