The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Jul. 10, 2018
Applicant:

Shanghai Tianma Micro-electronics Co., Ltd., Shanghai, CN;

Inventors:

Junhui Lou, Shanghai, CN;

Tianyi Wu, Shanghai, CN;

Jujian Fu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); G09G 3/3225 (2016.01); H01L 27/32 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); G09G 3/3225 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); G02F 2001/136295 (2013.01); G02F 2202/10 (2013.01); H01L 27/3262 (2013.01); H01L 27/3276 (2013.01); H01L 51/5253 (2013.01); H01L 2227/323 (2013.01);
Abstract

An array substrate, display panel, display apparatus, and method for manufacturing the array substrate are provided. Array substrate includes pixel driving circuit and peripheral driving circuit. Array substrate further includes a plurality of thin film transistors including first type of thin film transistor electrically connected into peripheral driving circuit for outputting driving signal and second type of thin film transistor connected to peripheral driving circuit for outputting scanning signal. The thin film transistor includes an active layer of oxide semiconductor including at least one sub-layer. Compared with second type of thin film transistor, active layer of first type of thin film transistor has more sub-layers, and thickness of active layer of first type of thin film transistor is larger. Each sub-layer of the active layer of the second type of thin film transistor is in a same layer as the active layer of the first type of thin film transistor.


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