The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
May. 01, 2017
Renesas Electronics Corporation, Tokyo, JP;
Tamotsu Ogata, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
An improvement is achieved in the performance of a semiconductor device having a nonvolatile memory. A first memory cell includes a first control gate electrode and a first memory gate electrode which are formed over a semiconductor substrate to be adjacent to each other. A second memory cell includes a second control gate electrode and a second memory gate electrode which are formed over the semiconductor substrate to be adjacent to each other. A width of a sidewall spacer formed on a side of the second memory gate electrode opposite to a side thereof where the second memory gate electrode is adjacent to the second control gate electrode is smaller than a width of another sidewall spacer formed on a side of the first memory gate electrode opposite to a side thereof where the first memory gate electrode is adjacent to the first control gate electrode. A threshold voltage of a first memory transistor including the first memory gate electrode in a neutral state is different a threshold voltage of a second memory transistor including the second memory gate electrode in the neutral state.