The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Mar. 19, 2018
Applicant:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Inventors:
Toshiro Sakamoto, Tokyo, JP;
Satoshi Takehara, Tokyo, JP;
Assignee:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11558 (2017.01); H01L 27/088 (2006.01); G11C 16/04 (2006.01); G05F 3/24 (2006.01); G04G 19/06 (2006.01); G11C 16/14 (2006.01); H01L 27/07 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11558 (2013.01); G04G 19/06 (2013.01); G05F 3/245 (2013.01); G05F 3/247 (2013.01); G11C 16/0416 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 27/0727 (2013.01); H01L 27/0883 (2013.01);
Abstract
To provide a nonvolatile storage element capable of being formed by an ordinary CMOS process using single layer polysilicon without requiring exclusive forming process and a reference voltage generation circuit with high versatility and high precision. A reference voltage generation circuit includes nonvolatile storage elements formed of single layer polysilicon. The nonvolatile storage elements each include a MOS transistor including a floating gate, a MOS transistor including a floating gate, and a MOS transistor including a floating gate.