The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Jun. 30, 2016
Applicant:

Alpha and Omega Semiconductor Incorporated;

Inventor:

Sik Lui, Sunnyvale, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/74 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823425 (2013.01); H01L 21/823487 (2013.01); H01L 27/0629 (2013.01); H01L 27/0688 (2013.01); H01L 29/0847 (2013.01); H01L 29/4236 (2013.01); H01L 29/7404 (2013.01); H01L 29/7828 (2013.01); H01L 27/0727 (2013.01);
Abstract

A bi-directional semiconductor switching device includes first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate. A source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side. Gates for both the first and second FETs are disposed in tandem in a common set of trenches formed a drift region of the semiconductor substrate that is sandwiched between the sources for the first and second FETs. The drift layer acts as a common drain for both the first FET and second FET.


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