The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Jul. 30, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Po-Chun Lin, Changhua County, TW;

Chin-Lung Chu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/10 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/10125 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/10145 (2013.01); H01L 2224/11013 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13076 (2013.01); H01L 2224/13078 (2013.01); H01L 2224/1607 (2013.01); H01L 2224/16012 (2013.01); H01L 2224/16105 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01);
Abstract

A manufacturing method of a combing bump structure is disclosed. In the manufacturing method, a semiconductor substrate is provided, a pad is formed on the semiconductor substrate, a conductive layer is formed on the pad, a solder bump is formed on the conductive layer, and at least two metal side walls are formed disposed along opposing laterals of the solder bump respectively.


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