The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Dec. 29, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Shinichi Uchida, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 23/5225 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 28/10 (2013.01);
Abstract
A semiconductor device includes: a plurality of first wires formed in a first layer and indicating fixed potentials; and an inductor formed in a second layer stacked on the first layer, and wiring widths of the first wires located within a range of a formation region of the inductor in a plan view among the plurality of first wires are formed narrower than wiring widths of the first wires located outside the range of the formation region of the inductor.