The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Feb. 24, 2019
Rfhic Corporation, Anyang, KR;
Frank Yantis Lowe, Phoenix, AZ (US);
Daniel Francis, Oakland, CA (US);
Firooz Nasser-Faili, Log Gatos, CA (US);
Daniel James Twitchen, High Wycombe, GB;
RFHIC CORPORATION, Anyang, KR;
Abstract
Methods of fabricating compound semiconductor device structures having polycrystalline CVD diamond. The method includes: providing a substrate that has a layer of single crystal compound semiconductor material; forming a bonding layer on a surface of the substrate, the bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm; and growing a layer of polycrystalline diamond on the bonding layer using a chemical vapor deposition technique. The effective thermal boundary resistance at the interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cmVs; and a sheet resistance of no more than 700 Ω/square.