The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Nov. 21, 2018
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Jong Su Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/5222 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5386 (2013.01); H01L 23/53204 (2013.01); H01L 23/53295 (2013.01); H01L 21/76834 (2013.01); H01L 21/76885 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01);
Abstract

An interconnection structure of the semiconductor integrated circuit device may be provided. The interconnection structure may include a first conductive pattern, a second conductive pattern, a dielectric layer and a contact part. The first conductive pattern may have a first width and a first length. The second conductive pattern may be formed over the first conductive pattern. The second conductive pattern may have a second width and a second length. The dielectric layer may be interposed between the first conductive pattern and the second conductive pattern. The contact part may be configured to simultaneously make contact with the first conductive pattern and the second conductive pattern.


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