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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10446410 B1

PDFFull Text
Date of Patent:
Oct. 15, 2019

Filed:

Mar. 07, 2016

Method of processing surface of polysilicon and method of processing surface of substrate assembly

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiaoyong Lu, Beijing, CN;

Chunping Long, Beijing, CN;

Chien Hung Liu, Beijing, CN;

Yucheng Chan, Beijing, CN;

Xiaolong Li, Beijing, CN;

Zheng Liu, Beijing, CN;

Assignee:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

Kinney & Lange, P.A.

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/30625 (2013.01); H01L 21/31051 (2013.01); H01L 21/31053 (2013.01); H01L 21/32115 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/48 (2013.01); H01L 21/7684 (2013.01); B81C 2201/0121 (2013.01);
Abstract

Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

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