The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 07, 2017
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Jie Zhao, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28229 (2013.01); H01L 21/28088 (2013.01); H01L 21/82345 (2013.01); H01L 27/088 (2013.01); H01L 29/513 (2013.01);
Abstract
The present disclosure provides semiconductor devices and fabrication methods thereof. A work function layer is formed on the semiconductor substrate. A buffer layer is formed on the work function layer. The work function layer is doped through the buffer layer with impurity ions. The buffer layer obstructs a flow of the impurity ions to control a concentration of the impurity ions in different regions of the work function layer to regulate a work function of the work function layer in the different regions.