The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Apr. 19, 2018
Asm Ip Holding B.v., Almere, NL;
Nupur Bhargava, Phoenix, AZ (US);
John Tolle, Gilbert, AZ (US);
Joe Margetis, Gilbert, AZ (US);
Matthew Goodman, Phoenix, AZ (US);
Robert Vyne, Chandler, AZ (US);
ASM IP Holding B.V., Almere, NL;
Abstract
A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×10atoms per cubic centimeter.