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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10446291 B1

PDFFull Text
Date of Patent:
Oct. 15, 2019

Filed:

Sep. 27, 2016

Paste composition

Applicant:

Toyo Aluminium Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Marwin Dhamrin, Osaka, JP;

Shota Suzuki, Osaka, JP;

Ken Kikuchi, Osaka, JP;

Masahiro Nakahara, Osaka, JP;

Naoya Morishita, Osaka, JP;

Assignee:

TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Khanh T Nguyen

Int. Cl.
CPC ...
H01B 1/22 (2006.01); H01L 21/225 (2006.01); H01L 31/18 (2006.01); H01L 21/22 (2006.01); H01L 21/228 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01B 1/22 (2013.01); H01L 21/225 (2013.01); H01L 21/228 (2013.01); H01L 21/2225 (2013.01); H01L 21/2254 (2013.01); H01L 31/028 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); H01L 51/0007 (2013.01);
Abstract

Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

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