The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Sep. 12, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;

Inventors:

Taeyoung Ahn, Suwon-si, KR;

Bogeon Jeon, Hwaseong-si, KR;

Wooseok Jeon, Seoul, KR;

Yungbin Chung, Yongin-si, KR;

Eunjeong Cho, Busan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H01L 21/027 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G02F 1/136 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); H01L 21/0273 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 29/4908 (2013.01); H01L 29/66765 (2013.01); H01L 29/78618 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01); G02F 2001/13606 (2013.01); G02F 2001/136218 (2013.01); G02F 2001/136295 (2013.01); G02F 2201/123 (2013.01);
Abstract

A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.


Find Patent Forward Citations

Loading…