The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jul. 12, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Manami Ando, Tokyo, JP;
Manabu Tanahara, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1333 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1343 (2006.01); G02F 1/1345 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); G02F 1/1345 (2013.01); G02F 1/134309 (2013.01); G02F 2201/121 (2013.01); G02F 2201/122 (2013.01); G02F 2201/123 (2013.01);
Abstract
Although each drain electrode extension portion which is a connection region between a drain electrode and a pixel electrode does not transmit visible light, making an end side of the drain electrode extension portion coincide with an end side of the pixel electrode can improve an aperture ratio. In addition, making each semiconductor layer with high resistance protrude from the end side of the drain electrode extension portion can restrict an increase in parasitic capacitance and bring the drain electrode extension portion closer to the gate wiring.