The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Aug. 24, 2012
Hartmut Rudmann, Jona, CH;
Matthias Maluck, Zug, CH;
Alexander Bietsch, Thalwil, CH;
Peter Roentgen, Thalwil, CH;
Stephan Heimgartner, Aarau Rohr, CH;
Hartmut Rudmann, Jona, CH;
Matthias Maluck, Zug, CH;
Alexander Bietsch, Thalwil, CH;
Peter Roentgen, Thalwil, CH;
Stephan Heimgartner, Aarau Rohr, CH;
AMS SENSORS SINGAPORE PTE. LTD., Singapore, SG;
Abstract
The wafer stack () comprises a first wafer (OW1) referred to as optics wafer and a second wafer (SW) referred to as spacer wafer, said optics wafer (OW1) having manufacturing irregularities. The spacer wafer (SW) is structured such that it at least partially compensates for said manufacturing irregularities. The corresponding method for manufacturing a device, which in particular can be an optical device, comprises carrying out a correction step for at least partially compensating for manufacturing irregularities. Such a correction step comprises providing a wafer (SW) referred to as spacer wafer, wherein that spacer wafer is structured for at least partially compensating for said manufacturing irregularities. Those manufacturing irregularities may comprise a deviation from a nominal value, e.g., a irregularities in focal length. The invention can allow to mass produce high-precision devices at a high yield.