The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10444262 B1

Date of Patent:

Oct. 15, 2019

Filed:

Jun. 27, 2017

Vertical sense devices in vertical trench mosfet

Applicant:

Vishay-siliconix, Santa Clara, CA (US);

Inventors:

M. Ayman Shibib, San Jose, CA (US);

Wenjie Zhang, San Jose, CA (US);

Assignee:

VISHAY-SILICONIX, San Jose, CA (US);

Attorney:

Primary Examiner:

Yasser A Abdelaziez

Int. Cl.

CPC ...

G01R 19/00 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); G01R 19/15 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);

U.S. Cl.

CPC ...

G01R 19/0092 (2013.01); G01R 19/15 (2013.01); H01L 21/0217 (2013.01); H01L 21/02129 (2013.01); H01L 21/28035 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 21/823487 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/088 (2013.01); H01L 29/0692 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/42372 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01);

Abstract

Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, a semiconductor device includes a main vertical trench metal oxide semiconductor field effect transistor (main-MOSFET). The main-MOSFET includes a plurality of parallel main trenches, wherein the main trenches comprise a first electrode coupled to a gate of the main-MOSFET, and a plurality of main mesas between the main trenches, wherein the main mesas comprise a main source and a main body of the main-MOSFET. The semiconductor device also includes a sense-diode. The sense-diode includes a plurality of sense-diode trenches, wherein each of the sense-diode trenches comprises a portion of one of the main trenches, and a plurality of sense-diode mesas between the source-FET trenches, wherein the sense-diode mesas comprise a sense-diode anode that is electrically isolated from the main source of the main-MOSFET.

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