The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Mar. 15, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventor:
Kaita Imai, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G01N 27/414 (2006.01); G01N 27/416 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G01N 27/4167 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes FET having a threshold changing according to a chemical state in a gate portion, a time-varying signal application section configured to apply a time-varying signal to at least one of a source, a drain and a back gate of the FET, and a signal reading section configured to read a change in the threshold of the FET resulting from the application of the time-varying signal as a signal.