The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Feb. 12, 2015
Applicant:

Technion Research and Development Foundation Ltd., Haifa, IL;

Inventor:

Yael Nemirovsky, Haifa, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/24 (2006.01); G01J 5/20 (2006.01); H01L 27/146 (2006.01); G01J 5/02 (2006.01); H01L 31/028 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
G01J 5/24 (2013.01); G01J 5/0215 (2013.01); G01J 5/20 (2013.01); H01L 27/14681 (2013.01); H01L 31/028 (2013.01); H01L 31/1105 (2013.01);
Abstract

A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.


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